MRF8S21120HR3 MRF8S21120HSR3
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
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AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
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EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
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Electromigration MTTF Calculator
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RF High Power Model
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.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2010
?
Initial Release of Data Sheet
相关PDF资料
MRF8S21140HSR3 FET RF N-CH 2GHZ 28V NI780S
MRF8S21200HSR6 MOSFET RF N-CH 48W NI-1230HS
MRF8S23120HSR5 MOSFET RF N-CH 120W NI-780S
MRF8S26120HSR3 FET RF N-CH 2.6GHZ 28V NI780S
MRF8S7170NR3 FET RF N-CH 700MHZ 28V OM780-2
MRF8S9100HSR5 MOSFET RF N-CH 100W NI-780S
MRF8S9120NR3 FET RF N-CH 900MHZ QM780-2
MRF8S9170NR3 FET RF N-CH 900MHZ 28V OM780-2
相关代理商/技术参数
MRF8S21120HSR5 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S21140HR3 功能描述:射频MOSFET电源晶体管 RF FET HV8 2GHZ 140W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S21140HR5 功能描述:射频MOSFET电源晶体管 RF FET HV8 2GHZ 140W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S21140HSR3 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 140W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S21140HSR5 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 140W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S21172HR3 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 42W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S21172HR3_12 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF8S21172HR5 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 42W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray